Josephson effect in indium bridges with large dimensions
Identifieur interne : 000853 ( Main/Exploration ); précédent : 000852; suivant : 000854Josephson effect in indium bridges with large dimensions
Auteurs : RBID : ISTEX:10909_1980_Article_BF00117941.pdfAbstract
We report experiments searching for Josephson behavior in indium bridges with dimensions in the following range : thickness 2–3 Μm ; length 3–15 Μm ; width 10–100 Μm. Josephson behavior has been observed in bridges up to 20 Μm wide prepared by a single-step evaporation procedure and photolithography. In this case the V-I characteristics, including the rf-induced step structure, can be well described by the RSJ model if the amplitude of the applied rf current exceeds a distinct value. These results and in particular the magnitude and temperature dependence of the normal resistance of the Josephson element can be explained by the formation of an extended, “two-dimensional” phase slip center. Indium bridges prepared by a multiple-step evaporation method often show complicated behavior, the Josephson effect being localized somewhere within a contamination layer separating the underlay films from the overlay film representing the bridge. Such multiple-step evaporation procedures should therefore be avoided.
DOI: 10.1007/BF00117941
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Huebener</name><affiliation wicri:level="3"><mods:affiliation>Physikalisches Institut, Universität Tübingen, Tübingen, West Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Physikalisches Institut, Universität Tübingen, Tübingen</wicri:regionArea><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Tübingen</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10909_1980_Article_BF00117941.pdf</idno><date when="1980">1980</date><idno type="doi">10.1007/BF00117941</idno><idno type="wicri:Area/Main/Corpus">000C09</idno><idno type="wicri:Area/Main/Curation">000C09</idno><idno type="wicri:Area/Main/Exploration">000853</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">We report experiments searching for Josephson behavior in indium bridges with dimensions in the following range : thickness 2–3 Μm ; length 3–15 Μm ; width 10–100 Μm. Josephson behavior has been observed in bridges up to 20 Μm wide prepared by a single-step evaporation procedure and photolithography. In this case the V-I characteristics, including the rf-induced step structure, can be well described by the RSJ model if the amplitude of the applied rf current exceeds a distinct value. These results and in particular the magnitude and temperature dependence of the normal resistance of the Josephson element can be explained by the formation of an extended, “two-dimensional” phase slip center. Indium bridges prepared by a multiple-step evaporation method often show complicated behavior, the Josephson effect being localized somewhere within a contamination layer separating the underlay films from the overlay film representing the bridge. Such multiple-step evaporation procedures should therefore be avoided.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="d20a4f7c0d1588543f3c1e627f7e63465b0073c4"><titleInfo lang="eng"><title>Josephson effect in indium bridges with large dimensions</title></titleInfo><name type="personal"><namePart type="given">H.</namePart><namePart type="family">Seifert</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Physikalisches Institut, Universität Tübingen, Tübingen, West Germany</affiliation></name><name type="personal"><namePart type="given">R. P.</namePart><namePart type="family">Huebener</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Physikalisches Institut, Universität Tübingen, Tübingen, West Germany</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1980-05-05</dateCreated><dateValid encoding="w3cdtf">2004-05-17</dateValid><copyrightDate encoding="w3cdtf">1980</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">We report experiments searching for Josephson behavior in indium bridges with dimensions in the following range : thickness 2–3 Μm ; length 3–15 Μm ; width 10–100 Μm. Josephson behavior has been observed in bridges up to 20 Μm wide prepared by a single-step evaporation procedure and photolithography. In this case the V-I characteristics, including the rf-induced step structure, can be well described by the RSJ model if the amplitude of the applied rf current exceeds a distinct value. These results and in particular the magnitude and temperature dependence of the normal resistance of the Josephson element can be explained by the formation of an extended, “two-dimensional” phase slip center. Indium bridges prepared by a multiple-step evaporation method often show complicated behavior, the Josephson effect being localized somewhere within a contamination layer separating the underlay films from the overlay film representing the bridge. Such multiple-step evaporation procedures should therefore be avoided.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>J Low Temp Phys</title></titleInfo><titleInfo><title>Journal of Low Temperature Physics</title><partNumber>Year: 1980</partNumber><partNumber>Volume: 41</partNumber><partNumber>Number: 3-4</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1980-11-01</dateIssued><copyrightDate encoding="w3cdtf">1980</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Characterization and Evaluation Materials</topic><topic>Condensed Matter</topic><topic>Magnetism, Magnetic Materials</topic></subject><identifier type="issn">0022-2291</identifier><identifier type="issn">Electronic: 1573-7357</identifier><identifier type="matrixNumber">10909</identifier><identifier type="local">IssueArticleCount: 15</identifier><recordInfo><recordOrigin>Plenum Publishing Corporation, 1980</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00117941</identifier><identifier type="matrixNumber">Art5</identifier><identifier type="local">BF00117941</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>275</start><end>295</end></extent></part><recordInfo><recordOrigin>Plenum Publishing Corporation, 1980</recordOrigin><recordIdentifier>10909_1980_Article_BF00117941.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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